BCV49,135
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- Mfr.Part #
- BCV49,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A SOT89
- Stock
- 132,550
- In Stock ：
- 132,550
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 1 V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1V
- JESD-30 Code :
- R-PSSO-F3
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 1.3W
- Max Collector Current :
- 500mA
- Power - Max :
- 1.3W
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Polarity :
- NPN
- Transition Frequency :
- 220MHz
- Emitter Base Voltage (VEBO) :
- 10V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 60V
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- AMPLIFIER
- Frequency - Transition :
- 220MHz
- Published :
- 2001
- ECCN Code :
- EAR99
- Package / Case :
- TO-243AA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 100μA, 100mA
- Max Breakdown Voltage :
- 60V
- Number of Pins :
- 4
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- BCV49
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Factory Lead Time :
- 4 Weeks
- Datasheets
- BCV49,135
SOT89.jpg)
NPN - Darlington 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-243AA Tape & Reel (TR) Surface Mount
BCV49,135 Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.With the emitter base voltage set at 10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 220MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BCV49,135 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 100μA, 100mA
the emitter base voltage is kept at 10V
a transition frequency of 220MHz
BCV49,135 Applications
There are a lot of Nexperia USA Inc.
BCV49,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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