BCR183WE6327

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Reach Compliance Code :

Unknown

Resistor - Base (R1) :

10 kOhms

Supplier Device Package :

PG-SOT323-3-1

Package :

Bulk

Power - Max :

250 mW

Polarity/Channel Type :

PNP

Transistor Type :

PNP - Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Surface Mount :

yes

Frequency - Transition :

200 MHz

DC Current Gain-Min (hFE) :

30

Transistor Element Material :

SILICON

Collector Current-Max (IC) :

0.1 A

Product Status :

Active

Power Dissipation-Max (Abs) :

0.25 W

Subcategory :

BIP General Purpose Small Signal

Package / Case :

SC-70, SOT-323

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA, 5V

Series :

-

Current - Collector (Ic) (Max) :

100 mA

Resistor - Emitter Base (R2) :

10 kOhms

Current - Collector Cutoff (Max) :

100nA (ICBO)

Number of Elements :

1

Mounting Type :

Surface Mount

Voltage - Collector Emitter Breakdown (Max) :

50 V

Manufacturer :

Infineon Technologies AG

ECCN Code :

EAR99