BC849CWE6327HTSA1
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- Mfr.Part #
- BC849CWE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT-323
- Stock
- 12,002
- In Stock ：
- 12,002
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Finish :
- MATTE TIN
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Power - Max :
- 250mW
- Transition Frequency :
- 250MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- BC849
- Qualification Status :
- Not Qualified
- Surface Mount :
- yes
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Package / Case :
- SC-70, SOT-323
- Frequency - Transition :
- 250MHz
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Published :
- 2011
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- Terminal Form :
- Gull wing
- Current - Collector (Ic) (Max) :
- 100mA
- Additional Feature :
- LOW NOISE
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Configuration :
- Single
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PDSO-G3
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Datasheets
- BC849CWE6327HTSA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849CWE6327HTSA1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.There is a 30V maximal voltage in the device due to collector-emitter breakdown.
BC849CWE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 250MHz
BC849CWE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC849CWE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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