BC849CW
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- Mfr.Part #
- BC849CW
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 11,231
- In Stock ：
- 11,231
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Published :
- 2009
- Number of Pins :
- 3
- hFE Min :
- 420
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BC849
- ECCN Code :
- EAR99
- Width :
- 1.35mm
- VCEsat-Max :
- 0.6 V
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- Power Dissipation :
- 200mW
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 30V
- Package / Case :
- SC-70, SOT-323
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 100mA
- Transition Frequency :
- 100MHz
- Height :
- 1mm
- Length :
- 2.2mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 600mV
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Datasheets
- BC849CW
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849CW,115 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849CW,115 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849CW,115 Applications
There are a lot of Nexperia USA Inc.
BC849CW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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