BC849CW
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- Mfr.Part #
- BC849CW
- Manufacturer
- Diotec Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 22,267
- In Stock ：
- 22,267
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-70, SOT-323
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transition Frequency :
- 100MHz
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Length :
- 2.2mm
- Max Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- VCEsat-Max :
- 0.6 V
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- hFE Min :
- 420
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Power Dissipation :
- 200mW
- Pin Count :
- 3
- Series :
- Automotive, AEC-Q101
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 30V
- Element Configuration :
- Single
- Width :
- 1.35mm
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Height :
- 1mm
- Base Part Number :
- BC849
- Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 600mV
- JESD-609 Code :
- e3
- Datasheets
- BC849CW
BC849CW Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849CW,115 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849CW,115 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849CW,115 Applications
There are a lot of Nexperia USA Inc.
BC849CW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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