BC849CW,135

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Mounting Type :

Surface Mount

Published :

2009

Collector Emitter Breakdown Voltage :

30V

Contact Plating :

Tin

Series :

Automotive, AEC-Q101

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Transition Frequency :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

30V

Collector Emitter Voltage (VCEO) :

30V

Max Collector Current :

100mA

ECCN Code :

EAR99

Power Dissipation :

200mW

Package / Case :

SC-70, SOT-323

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Emitter Base Voltage (VEBO) :

5V

JESD-609 Code :

e3

Terminal Position :

Dual

Mount :

Surface Mount

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Base Part Number :

BC849

Frequency :

100MHz

Gain Bandwidth Product :

100MHz

Element Configuration :

Single

Pin Count :

3

VCEsat-Max :

0.6 V

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

15nA ICBO

Number of Terminations :

3

Max Power Dissipation :

200mW