BC849CW,115
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- Mfr.Part #
- BC849CW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 3,487
- In Stock ：
- 3,487
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 30V
- Width :
- 1.35mm
- Collector Emitter Saturation Voltage :
- 600mV
- Gain Bandwidth Product :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- hFE Min :
- 420
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AMPLIFIER
- Published :
- 2009
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 200mW
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- VCEsat-Max :
- 0.6 V
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 100mA
- Package / Case :
- SC-70, SOT-323
- Max Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Surface Mount
- Length :
- 2.2mm
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Height :
- 1mm
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BC849
- Datasheets
- BC849CW,115
BC849CW,115 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849CW,115 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849CW,115 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849CW,115 Applications
There are a lot of Nexperia USA Inc.
BC849CW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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