BC849CW,115
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- Mfr.Part #
- BC849CW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 3,487
- In Stock ：
- 3,487
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Max Power Dissipation :
- 200mW
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- hFE Min :
- 420
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- VCEsat-Max :
- 0.6 V
- Power Dissipation :
- 200mW
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 30V
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Factory Lead Time :
- 4 Weeks
- Pin Count :
- 3
- Length :
- 2.2mm
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Width :
- 1.35mm
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 30V
- Lead Free :
- Lead Free
- Height :
- 1mm
- Element Configuration :
- Single
- Base Part Number :
- BC849
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 600mV
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- SC-70, SOT-323
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Number of Pins :
- 3
- Datasheets
- BC849CW,115
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849CW,115 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849CW,115 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849CW,115 Applications
There are a lot of Nexperia USA Inc.
BC849CW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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