BC849C,235
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- Mfr.Part #
- BC849C,235
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A TO236AB
- Stock
- 9,890
- In Stock ：
- 9,890
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Power Dissipation :
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Max Power Dissipation :
- 250mW
- Transition Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Frequency :
- 100MHz
- Base Part Number :
- BC849
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 30V
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 30V
- Factory Lead Time :
- 4 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Element Configuration :
- Single
- Number of Pins :
- 3
- Contact Plating :
- Tin
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Published :
- 2009
- Terminal Position :
- Dual
- Series :
- Automotive, AEC-Q101
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- VCEsat-Max :
- 0.6 V
- Datasheets
- BC849C,235
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC849C,235 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC849C,235 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849C,235 Applications
There are a lot of Nexperia USA Inc.
BC849C,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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