BC849BW,115
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- Mfr.Part #
- BC849BW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC849BW - SMALL SIG
- Stock
- 2,676
- In Stock ：
- 2,676
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- VCEsat-Max :
- 0.6 V
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 30V
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BC849
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 30V
- Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Power Dissipation :
- 200mW
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Published :
- 2001
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- NPN
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Datasheets
- BC849BW,115
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849BW,115 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849BW,115 Applications
There are a lot of Nexperia USA Inc.
BC849BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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