BC849BW,115
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- Mfr.Part #
- BC849BW,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC849BW - SMALL SIG
- Stock
- 2,676
- In Stock ：
- 2,676
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- VCEsat-Max :
- 0.6 V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 30V
- Pin Count :
- 3
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-70, SOT-323
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Power Dissipation :
- 200mW
- Base Part Number :
- BC849
- ECCN Code :
- EAR99
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 200mW
- Published :
- 2001
- Datasheets
- BC849BW,115
BC849BW,115 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849BW,115 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849BW,115 Applications
There are a lot of Nexperia USA Inc.
BC849BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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