BC849BW,115
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- Mfr.Part #
- BC849BW,115
- Manufacturer
- Nexperia
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 2,676
- In Stock ：
- 2,676
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Max Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- VCEsat-Max :
- 0.6 V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Transition Frequency :
- 100MHz
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 3
- Power Dissipation :
- 200mW
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Series :
- Automotive, AEC-Q101
- Max Power Dissipation :
- 200mW
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BC849
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Gain Bandwidth Product :
- 100MHz
- Mount :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Package / Case :
- SC-70, SOT-323
- Datasheets
- BC849BW,115
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC849BW,115 Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC849BW,115 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC849BW,115 Applications
There are a lot of Nexperia USA Inc.
BC849BW,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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