BC849BLT1G
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- Mfr.Part #
- BC849BLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 15,732
- In Stock ：
- 15,732
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Width :
- 1.3mm
- hFE Min :
- 200
- Polarity/Channel Type :
- NPN
- Current Rating :
- 100mA
- Height :
- 940μm
- Voltage - Rated DC :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 100MHz
- Max Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 30V
- Frequency :
- 100MHz
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 300mW
- Pin Count :
- 3
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Published :
- 2007
- Gain Bandwidth Product :
- 100MHz
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 30V
- Max Collector Current :
- 100mA
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Length :
- 2.9mm
- Collector Emitter Saturation Voltage :
- 600mV
- Datasheets
- BC849BLT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC849BLT1G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 30V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC849BLT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC849BLT1G Applications
There are a lot of ON Semiconductor
BC849BLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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