BC848CWT1G
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- Mfr.Part #
- BC848CWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SC70-3
- Stock
- 135,737
- In Stock ：
- 135,737
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Width :
- 1.35mm
- Gain Bandwidth Product :
- 100MHz
- Voltage - Rated DC :
- 30V
- Lead Free :
- Lead Free
- Power Dissipation :
- 150mW
- Package / Case :
- SC-70, SOT-323
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 30V
- hFE Min :
- 270
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Current Rating :
- 100mA
- Transistor Application :
- AMPLIFIER
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 45V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Length :
- 2.2mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2005
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 900μm
- Max Power Dissipation :
- 150mW
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Frequency :
- 100MHz
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 600mV
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Datasheets
- BC848CWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848CWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC848CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848CWT1G Applications
There are a lot of ON Semiconductor
BC848CWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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