BC848CWT1G
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- Mfr.Part #
- BC848CWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SC70-3
- Stock
- 135,737
- In Stock ：
- 135,737
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- hFE Min :
- 270
- Voltage - Rated DC :
- 30V
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 100mA
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Published :
- 2005
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 600mV
- Number of Elements :
- 1
- Length :
- 2.2mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 1.35mm
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Max Power Dissipation :
- 150mW
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Collector Emitter Breakdown Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Form :
- Gull wing
- Height :
- 900μm
- Max Breakdown Voltage :
- 45V
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 100mA
- Power Dissipation :
- 150mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 100MHz
- Transition Frequency :
- 100MHz
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Datasheets
- BC848CWT1G
BC848CWT1G Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848CWT1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC848CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848CWT1G Applications
There are a lot of ON Semiconductor
BC848CWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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