BC848CWH6327XTSA1
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- Mfr.Part #
- BC848CWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 39,132
- In Stock ：
- 39,132
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 600mV
- Power Dissipation :
- 250mW
- Transition Frequency :
- 250MHz
- Factory Lead Time :
- 6 Weeks
- Number of Terminations :
- 3
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 250mW
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 600mV
- Lead Free :
- Lead Free
- Max Collector Current :
- 100mA
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Halogen Free :
- Halogen Free
- Package / Case :
- SC-70, SOT-323
- Current - Collector (Ic) (Max) :
- 100mA
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Length :
- 2mm
- Width :
- 1.25mm
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- NPN
- Base Part Number :
- BC848
- Published :
- 2011
- RoHS Status :
- ROHS3 Compliant
- Frequency :
- 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Height :
- 800μm
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC848CWH6327XTSA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848CWH6327XTSA1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC848CWH6327XTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
BC848CWH6327XTSA1 Applications
There are a lot of Infineon Technologies
BC848CWH6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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