BC848CW
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- Mfr.Part #
- BC848CW
- Manufacturer
- YANGJIE
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- SOT-323 NPN 0.2W 0.1A 30V Transi
- Stock
- 15,000
- In Stock ：
- 15,000
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- Manufacturer :
- YANGJIE
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Width :
- 1.35mm
- Operating Temperature :
- -65°C~150°C TJ
- Power Dissipation :
- 200mW
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 3
- Factory Lead Time :
- 15 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 2.2mm
- Gain Bandwidth Product :
- 300MHz
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Element Configuration :
- Single
- Frequency :
- 300MHz
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Weight :
- 6.010099mg
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 300MHz
- Height :
- 1mm
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 30V
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Published :
- 2007
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SC-70, SOT-323
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Datasheets
- BC848CW
NPN -65°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848CW-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 100mA volts.
BC848CW-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
BC848CW-7-F Applications
There are a lot of Diodes Incorporated
BC848CW-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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