BC848CW
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- Mfr.Part #
- BC848CW
- Manufacturer
- Diotec Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 3,000
- In Stock ：
- 3,000
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- Manufacturer :
- Diotec Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Gain Bandwidth Product :
- 300MHz
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 300MHz
- Mount :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- SC-70, SOT-323
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 30V
- Weight :
- 6.010099mg
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Length :
- 2.2mm
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- Transition Frequency :
- 300MHz
- Number of Terminations :
- 3
- Power Dissipation :
- 200mW
- Transistor Application :
- SWITCHING
- Width :
- 1.35mm
- Number of Elements :
- 1
- Height :
- 1mm
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Position :
- Dual
- Published :
- 2007
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Datasheets
- BC848CW
NPN -65°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848CW-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 300MHz.During maximum operation, collector current can be as low as 100mA volts.
BC848CW-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
BC848CW-7-F Applications
There are a lot of Diodes Incorporated
BC848CW-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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