BC848CPDW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Length :

2.2mm

Published :

2009

Pbfree Code :

yes

Width :

1.35mm

Number of Pins :

6

Gain Bandwidth Product :

100MHz

Factory Lead Time :

8 Weeks

Current Rating :

100mA

JESD-609 Code :

e3

Element Configuration :

Dual

Power Dissipation :

380mW

Max Power Dissipation :

380mW

Max Collector Current :

100mA

Transistor Type :

NPN, PNP

Collector Base Voltage (VCBO) :

30V

Pin Count :

6

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Height :

1mm

Contact Plating :

Tin

Voltage - Rated DC :

30V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Package / Case :

6-TSSOP, SC-88, SOT-363

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Frequency :

100MHz

Collector Emitter Voltage (VCEO) :

30V

hFE Min :

270

Transition Frequency :

100MHz

Max Breakdown Voltage :

40V

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Polarity :

NPN, PNP

Operating Temperature :

-55°C~150°C TJ

Surface Mount :

yes

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

6

Power - Max :

250mW

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

30V

Collector Emitter Saturation Voltage :

600mV

Current - Collector Cutoff (Max) :

15nA ICBO

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Number of Elements :

2