BC848CPDW1T1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector Cutoff (Max) :

15nA ICBO

Package / Case :

6-TSSOP, SC-88, SOT-363

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Collector Base Voltage (VCBO) :

30V

hFE Min :

270

Number of Elements :

2

Pbfree Code :

yes

Current Rating :

100mA

ECCN Code :

EAR99

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

30V

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Gain Bandwidth Product :

100MHz

Polarity :

NPN, PNP

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Power Dissipation :

380mW

Number of Pins :

6

Number of Terminations :

6

Power - Max :

250mW

Transition Frequency :

100MHz

Published :

2009

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Length :

2.2mm

Pin Count :

6

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

600mV

Width :

1.35mm

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Dual

Contact Plating :

Tin

Frequency :

100MHz

JESD-609 Code :

e3

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

30V

Height :

1mm

Max Breakdown Voltage :

40V

Time@Peak Reflow Temperature-Max (s) :

40

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Terminal Form :

Gull wing

Transistor Type :

NPN, PNP

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Max Power Dissipation :

380mW