BC848CLT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Pins :

3

Pin Count :

3

Voltage - Rated DC :

30V

Collector Emitter Voltage (VCEO) :

30V

Collector Emitter Saturation Voltage :

600mV

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Frequency :

100MHz

Terminal Form :

Gull wing

Terminal Position :

Dual

Gain Bandwidth Product :

100MHz

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Width :

1.3mm

Radiation Hardening :

No

Transition Frequency :

100MHz

Published :

2005

Max Collector Current :

100mA

Contact Plating :

Tin

Time@Peak Reflow Temperature-Max (s) :

40

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Height :

940μm

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Max Power Dissipation :

300mW

Element Configuration :

Single

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Elements :

1

Emitter Base Voltage (VEBO) :

5V

Collector Emitter Breakdown Voltage :

30V

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Surface Mount :

yes

Lead Free :

Lead Free

Polarity/Channel Type :

NPN

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Base Voltage (VCBO) :

30V

hFE Min :

420

Power Dissipation :

300mW

Factory Lead Time :

4 Weeks

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Current Rating :

100mA

Max Breakdown Voltage :

30V

Length :

2.9mm

Operating Temperature :

-55°C~150°C TJ