BC848CE6433HTMA1
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- Mfr.Part #
- BC848CE6433HTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23
- Stock
- 10,654
- In Stock ：
- 10,654
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- Current Rating :
- 100mA
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Voltage - Rated DC :
- 30V
- Gain Bandwidth Product :
- 250MHz
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- Frequency :
- 250MHz
- Transition Frequency :
- 250MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Length :
- 2.9mm
- Collector Emitter Saturation Voltage :
- 600mV
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- hFE Min :
- 110
- Pbfree Code :
- yes
- Published :
- 2005
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- 30V
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 330mW
- Terminal Position :
- Dual
- Max Breakdown Voltage :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Height :
- 900μm
- Max Power Dissipation :
- 330mW
- Width :
- 1.3mm
- Base Part Number :
- BC848
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Datasheets
- BC848CE6433HTMA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC848CE6433HTMA1 Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 250MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 100mA volts is possible.
BC848CE6433HTMA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC848CE6433HTMA1 Applications
There are a lot of Infineon Technologies
BC848CE6433HTMA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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