BC848CE6327HTSA1

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Mfr.Part #
BC848CE6327HTSA1
Manufacturer
Infineon Technologies
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 30V 0.1A SOT-23
Stock
50,585
In Stock :
50,585

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Current :
100mA
Voltage :
30V
Number of Terminations :
3
Packaging :
Tape and Reel (TR)
Published :
2001
Polarity/Channel Type :
NPN
Mount :
Surface Mount
Collector Base Voltage (VCBO) :
30V
RoHS Status :
ROHS3 Compliant
Collector Emitter Breakdown Voltage :
30V
Max Collector Current :
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
420 @ 2mA 5V
Base Part Number :
BC848
Frequency :
250MHz
Voltage - Rated DC :
30V
Max Power Dissipation :
330mW
Package / Case :
TO-236-3, SC-59, SOT-23-3
Power Dissipation :
330mW
Max Breakdown Voltage :
30V
Emitter Base Voltage (VEBO) :
6V
Transistor Type :
NPN
Halogen Free :
Not Halogen Free
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
Terminal Position :
Dual
Radiation Hardening :
No
Width :
1.3mm
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
ECCN Code :
EAR99
JESD-609 Code :
e3
Length :
2.9mm
Transition Frequency :
250MHz
Current Rating :
100mA
Terminal Form :
Gull wing
Pbfree Code :
yes
Height :
1mm
Contact Plating :
Tin
Number of Pins :
3
Element Configuration :
Single
Collector Emitter Saturation Voltage :
600mV
Current - Collector Cutoff (Max) :
15nA ICBO
Collector Emitter Voltage (VCEO) :
600mV
Lead Free :
Lead Free
Datasheets
BC848CE6327HTSA1
Introducing Transistors - Bipolar (BJT) - Single Infineon Technologies BC848CE6327HTSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Voltage:30V, Number of Terminations:3, Base Part Number:BC848, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, BC848CE6327HTSA1 pinout, BC848CE6327HTSA1 datasheet PDF, BC848CE6327HTSA1 amp .Beyond Transistors - Bipolar (BJT) - Single Infineon Technologies BC848CE6327HTSA1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies BC848CE6327HTSA1


NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC848CE6327HTSA1 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 600mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 100mA volts at its maximum.

BC848CE6327HTSA1 Features


the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz


BC848CE6327HTSA1 Applications


There are a lot of Infineon Technologies
BC848CE6327HTSA1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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