BC848CDXV6T5G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e3

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Reach Compliance Code :

Unknown

Published :

2010

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Terminal Form :

Flat

Transistor Type :

2 NPN (Dual)

Polarity :

NPN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Gain Bandwidth Product :

100MHz

Max Collector Current :

100mA

Pin Count :

6

Mount :

Surface Mount

Voltage - Rated DC :

32V

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

500mW

Transistor Element Material :

SILICON

Transition Frequency :

100MHz

hFE Min :

270

Number of Terminations :

6

JESD-30 Code :

R-PDSO-F6

Collector Emitter Voltage (VCEO) :

600mV

Collector Emitter Saturation Voltage :

600mV

Qualification Status :

Not Qualified

Current Rating :

100mA

Transistor Application :

AMPLIFIER

Number of Elements :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

SOT-563, SOT-666

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

15nA ICBO

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

30V

Collector Emitter Breakdown Voltage :

30V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Dual

Base Part Number :

BC847CD