BC848CDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

500mW

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

hFE Min :

420

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 4 days ago)

Emitter Base Voltage (VEBO) :

5V

Number of Terminations :

6

Transistor Application :

AMPLIFIER

Current - Collector Cutoff (Max) :

15nA ICBO

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Package / Case :

SOT-563, SOT-666

Terminal Finish :

Tin (Sn)

Transition Frequency :

100MHz

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Collector Base Voltage (VCBO) :

30V

Lead Free :

Lead Free

Number of Elements :

2

Current Rating :

100mA

JESD-609 Code :

e3

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mount :

Surface Mount

Pbfree Code :

yes

Qualification Status :

Not Qualified

Published :

2009

Voltage - Rated DC :

30V

Transistor Element Material :

SILICON

Gain Bandwidth Product :

100MHz

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

30V

Pin Count :

6

Max Collector Current :

100mA

Polarity :

NPN

Base Part Number :

BC847CD

Transistor Type :

2 NPN (Dual)

Collector Emitter Voltage (VCEO) :

600mV

Terminal Form :

Flat

Number of Pins :

6

Collector Emitter Saturation Voltage :

600mV