BC848CDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Packaging :

Tape and Reel (TR)

Width :

1.35mm

Max Power Dissipation :

380mW

Element Configuration :

Dual

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Pbfree Code :

yes

ECCN Code :

EAR99

Max Collector Current :

100mA

JESD-609 Code :

e3

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

600mV

Collector Emitter Voltage (VCEO) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Height :

1.1mm

Collector Base Voltage (VCBO) :

30V

Collector Emitter Breakdown Voltage :

30V

Current - Collector Cutoff (Max) :

15nA ICBO

Gain Bandwidth Product :

100MHz

Max Breakdown Voltage :

30V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Pin Count :

6

Voltage - Rated DC :

30V

Radiation Hardening :

No

Current Rating :

100mA

Surface Mount :

yes

Transistor Application :

AMPLIFIER

Length :

2.2mm

Transistor Type :

2 NPN (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Polarity :

NPN

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Number of Elements :

2

Number of Terminations :

6

Power Dissipation :

380mW

Frequency :

100MHz

Published :

2007

Factory Lead Time :

8 Weeks

Emitter Base Voltage (VEBO) :

5V

Transition Frequency :

100MHz

Package / Case :

6-TSSOP, SC-88, SOT-363

hFE Min :

420

Number of Pins :

6

Terminal Form :

Gull wing