BC848CDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Time@Peak Reflow Temperature-Max (s) :

40

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Terminal Form :

Gull wing

Package / Case :

6-TSSOP, SC-88, SOT-363

Max Power Dissipation :

380mW

Current Rating :

100mA

hFE Min :

420

Frequency :

100MHz

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Length :

2.2mm

Transition Frequency :

100MHz

Surface Mount :

yes

Pin Count :

6

Max Breakdown Voltage :

30V

Collector Emitter Voltage (VCEO) :

30V

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Base Voltage (VCBO) :

30V

Emitter Base Voltage (VEBO) :

5V

Polarity :

NPN

Collector Emitter Saturation Voltage :

600mV

Published :

2007

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

2

Height :

1.1mm

Transistor Application :

AMPLIFIER

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Mounting Type :

Surface Mount

Voltage - Rated DC :

30V

Transistor Type :

2 NPN (Dual)

Number of Terminations :

6

Width :

1.35mm

Element Configuration :

Dual

Gain Bandwidth Product :

100MHz

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Power Dissipation :

380mW

Collector Emitter Breakdown Voltage :

30V

JESD-609 Code :

e3

ECCN Code :

EAR99

Max Collector Current :

100mA

Factory Lead Time :

8 Weeks

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

260

Pbfree Code :

yes

Transistor Element Material :

SILICON