BC848C-7-F
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- Mfr.Part #
- BC848C-7-F
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 4,445
- In Stock ：
- 4,445
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Junction Temperature (Tj) :
- 150°C
- Max Power Dissipation :
- 300mW
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Published :
- 2008
- Height :
- 1.1mm
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 310mW
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Additional Feature :
- High Reliability
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Saturation Voltage :
- 90mV
- Transistor Application :
- SWITCHING
- Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Length :
- 3.05mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Max Collector Current :
- 200mA
- Terminal Position :
- Dual
- Element Configuration :
- Single
- Continuous Collector Current :
- 100mA
- Width :
- 1.4mm
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Type :
- NPN
- Base Part Number :
- BC848C
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 30V
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Weight :
- 7.994566mg
- Transition Frequency :
- 300MHz
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Qualification Status :
- Not Qualified
- Max Breakdown Voltage :
- 30V
- hFE Min :
- 420
- Lead Free :
- Lead Free
- Factory Lead Time :
- 15 Weeks
- Gain Bandwidth Product :
- 300MHz
- Datasheets
- BC848C-7-F
NPN -65°C~150°C TJ 15nA 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC848C-7-F Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.With a collector emitter saturation voltage of 90mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 100mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 300MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 200mA volts at its maximum.
BC848C-7-F Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 90mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
BC848C-7-F Applications
There are a lot of Diodes Incorporated
BC848C-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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