BC848BWT1G
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- Mfr.Part #
- BC848BWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SC70-3
- Stock
- 2,760
- In Stock ：
- 2,760
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Lifecycle Status :
- ACTIVE (Last Updated: 15 hours ago)
- Surface Mount :
- yes
- Package / Case :
- SC-70, SOT-323
- Transistor Type :
- NPN
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Transistor Application :
- AMPLIFIER
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- hFE Min :
- 150
- Max Breakdown Voltage :
- 30V
- Width :
- 1.35mm
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Position :
- Dual
- Length :
- 2.2mm
- Height :
- 900μm
- Collector Base Voltage (VCBO) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Transition Frequency :
- 100MHz
- Voltage - Rated DC :
- 30V
- Power Dissipation :
- 150mW
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- Published :
- 2007
- Current Rating :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 150mW
- Number of Pins :
- 3
- Frequency :
- 100MHz
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 30V
- Datasheets
- BC848BWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC848BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848BWT1G Applications
There are a lot of ON Semiconductor
BC848BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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