BC848BWT1
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- Mfr.Part #
- BC848BWT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SC70-3
- Stock
- 30,405
- In Stock ：
- 30,405
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Surface Mount :
- yes
- Published :
- 2007
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power Dissipation :
- 150mW
- Number of Pins :
- 3
- Max Power Dissipation :
- 150mW
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 100MHz
- Terminal Position :
- Dual
- Length :
- 2.2mm
- Package / Case :
- SC-70, SOT-323
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- ACTIVE (Last Updated: 15 hours ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 30V
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transition Frequency :
- 100MHz
- Height :
- 900μm
- Max Breakdown Voltage :
- 30V
- Pin Count :
- 3
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Number of Elements :
- 1
- Collector Emitter Saturation Voltage :
- 600mV
- Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 30V
- hFE Min :
- 150
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Width :
- 1.35mm
- Datasheets
- BC848BWT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848BWT1G Overview
In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC848BWT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848BWT1G Applications
There are a lot of ON Semiconductor
BC848BWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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