BC848BW
- Mfr.Part #
- BC848BW
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 41,978
- In Stock :
- 41,978
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Width :
- 1.35mm
- Element Configuration :
- Single
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Collector Base Voltage (VCBO) :
- 30V
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- -65°C~150°C TJ
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Package / Case :
- SC-70, SOT-323
- Frequency :
- 300MHz
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- hFE Min :
- 200
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Pin Count :
- 3
- Length :
- 2.2mm
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 30V
- Contact Plating :
- Tin
- Height :
- 1mm
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 200mW
- Gain Bandwidth Product :
- 300MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 200mW
- Weight :
- 6.010099mg
- Published :
- 2007
- Emitter Base Voltage (VEBO) :
- 5V
- Transition Frequency :
- 300MHz
- Datasheets
- BC848BW
BC848BW Documents

NPN -65°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848BW-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.A maximum collector current of 100mA volts can be achieved.
BC848BW-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
BC848BW-7-F Applications
There are a lot of Diodes Incorporated
BC848BW-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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