BC848BW
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- Mfr.Part #
- BC848BW
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT323
- Stock
- 41,978
- In Stock ：
- 41,978
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Pin Count :
- 3
- Transistor Type :
- NPN
- Package / Case :
- SC-70, SOT-323
- Power Dissipation :
- 200mW
- REACH SVHC :
- No SVHC
- Width :
- 1.35mm
- Length :
- 2.2mm
- Polarity/Channel Type :
- NPN
- Height :
- 1mm
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 30V
- Pbfree Code :
- yes
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Frequency :
- 300MHz
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Published :
- 2007
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Breakdown Voltage :
- 30V
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 20nA ICBO
- Collector Emitter Voltage (VCEO) :
- 30V
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- hFE Min :
- 200
- Operating Temperature :
- -65°C~150°C TJ
- Weight :
- 6.010099mg
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Transition Frequency :
- 300MHz
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Datasheets
- BC848BW
NPN -65°C~150°C TJ 20nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848BW-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 300MHz.A maximum collector current of 100mA volts can be achieved.
BC848BW-7-F Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 300MHz
BC848BW-7-F Applications
There are a lot of Diodes Incorporated
BC848BW-7-F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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