BC848BT116
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- Mfr.Part #
- BC848BT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SST3
- Stock
- 1,693
- In Stock ：
- 1,693
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- hFE Min :
- 200
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- HTS Code :
- 8541.21.00.75
- JESD-609 Code :
- e1
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Current Rating :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Collector Current :
- 100mA
- Number of Elements :
- 1
- Max Power Dissipation :
- 350mW
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 200MHz
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 600mV
- Published :
- 2005
- Factory Lead Time :
- 13 Weeks
- Terminal Position :
- Dual
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Continuous Collector Current :
- 100mA
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Contact Plating :
- Copper, Silver, Tin
- Gain Bandwidth Product :
- 200MHz
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Datasheets
- BC848BT116
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC848BT116 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 100mA to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 100mA volts.
BC848BT116 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC848BT116 Applications
There are a lot of ROHM Semiconductor
BC848BT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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