BC848BT116
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- Mfr.Part #
- BC848BT116
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SST3
- Stock
- 1,693
- In Stock ：
- 1,693
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.75
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 30V
- Published :
- 2005
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 200
- Current Rating :
- 100mA
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- 100mA
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Factory Lead Time :
- 13 Weeks
- Pin Count :
- 3
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Voltage - Rated DC :
- 30V
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Contact Plating :
- Copper, Silver, Tin
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 350mW
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 200MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Emitter Voltage (VCEO) :
- 30V
- JESD-609 Code :
- e1
- Collector Emitter Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 100mA
- Transition Frequency :
- 200MHz
- Terminal Form :
- Gull wing
- Pbfree Code :
- yes
- Datasheets
- BC848BT116
BC848BT116 Documents
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC848BT116 Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.Single BJT transistor is essential to maintain the continuous collector voltage at 100mA to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 100mA volts.
BC848BT116 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC848BT116 Applications
There are a lot of ROHM Semiconductor
BC848BT116 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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