BC848BMTF
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- Mfr.Part #
- BC848BMTF
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 168,116
- In Stock ：
- 168,116
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 300MHz
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 100mA
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Height :
- 930μm
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 310mW
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 6 days ago)
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Published :
- 2011
- Collector Emitter Saturation Voltage :
- 200mV
- Transition Frequency :
- 300MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 310mW
- Frequency :
- 300MHz
- Base Part Number :
- BC848
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 30V
- hFE Min :
- 110
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 30V
- Width :
- 1.3mm
- Length :
- 2.92mm
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Weight :
- 30mg
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 100mA
- Max Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Datasheets
- BC848BMTF
BC848BMTF Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC848BMTF Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 200mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC848BMTF Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC848BMTF Applications
There are a lot of ON Semiconductor
BC848BMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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