BC848BLT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

100MHz

Collector Emitter Saturation Voltage :

600mV

Pbfree Code :

yes

ECCN Code :

EAR99

Transition Frequency :

100MHz

Power Dissipation :

300mW

Type :

GENERAL PURPOSE

Current - Collector Cutoff (Max) :

15nA ICBO

JESD-609 Code :

e3

Number of Elements :

1

Published :

2003

Emitter Base Voltage (VEBO) :

5V

Pin Count :

3

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Peak Reflow Temperature (Cel) :

260

Height :

940μm

Length :

2.9mm

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Voltage (VCEO) :

30V

Collector Emitter Breakdown Voltage :

30V

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Number of Pins :

3

Noise Figure :

10 dB

Transistor Type :

NPN

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Cut Tape (CT)

Current Rating :

100mA

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

hFE Min :

200

Width :

1.3mm

Collector Base Voltage (VCBO) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

300mW

Terminal Form :

Gull wing

Factory Lead Time :

4 Weeks

Contact Plating :

Tin

Max Breakdown Voltage :

30V

REACH SVHC :

No SVHC

Voltage - Rated DC :

30V

Radiation Hardening :

No

Number of Terminations :

3

Terminal Position :

Dual

Max Collector Current :

100mA

Gain Bandwidth Product :

100MHz