BC848BLT1

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

1.3mm

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Transition Frequency :

100MHz

Noise Figure :

10 dB

Number of Pins :

3

REACH SVHC :

No SVHC

Max Collector Current :

100mA

Transistor Type :

NPN

Voltage - Rated DC :

30V

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Pbfree Code :

yes

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Lead Free :

Lead Free

Max Power Dissipation :

300mW

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Length :

2.9mm

Gain Bandwidth Product :

100MHz

Terminal Position :

Dual

Collector Base Voltage (VCBO) :

30V

Current Rating :

100mA

Factory Lead Time :

4 Weeks

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Published :

2003

Collector Emitter Voltage (VCEO) :

30V

Collector Emitter Breakdown Voltage :

30V

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

JESD-609 Code :

e3

Element Configuration :

Single

Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Transistor Application :

SWITCHING

hFE Min :

200

Collector Emitter Saturation Voltage :

600mV

Frequency :

100MHz

Current - Collector Cutoff (Max) :

15nA ICBO

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Time@Peak Reflow Temperature-Max (s) :

40

Packaging :

Cut Tape (CT)

Type :

GENERAL PURPOSE

Max Breakdown Voltage :

30V

Height :

940μm