BC848ALT1G
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- Mfr.Part #
- BC848ALT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A SOT23-3
- Stock
- 5,006
- In Stock ：
- 5,006
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Cut Tape (CT)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Elements :
- 1
- Pin Count :
- 3
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 30V
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 100MHz
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 600mV
- Frequency :
- 100MHz
- Length :
- 3.04mm
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Width :
- 1.4mm
- Collector Emitter Breakdown Voltage :
- 30V
- Height :
- 1.01mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Transistor Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Current Rating :
- 100mA
- Power Dissipation :
- 300mW
- Published :
- 2007
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 300mW
- Max Breakdown Voltage :
- 30V
- Collector Base Voltage (VCBO) :
- 30V
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 110
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- Max Collector Current :
- 100mA
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- BC848ALT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC848ALT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC848ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848ALT1G Applications
There are a lot of ON Semiconductor
BC848ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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