BC848ALT1
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- Mfr.Part #
- BC848ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 100MA SOT23
- Stock
- 2,493
- In Stock ：
- 2,493
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Width :
- 1.4mm
- Power Dissipation :
- 300mW
- Current Rating :
- 100mA
- Number of Elements :
- 1
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 1.01mm
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 600mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 30V
- Polarity/Channel Type :
- NPN
- Packaging :
- Cut Tape (CT)
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 30V
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 2 Weeks
- Length :
- 3.04mm
- hFE Min :
- 110
- Max Collector Current :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Pin Count :
- 3
- Published :
- 2007
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Element Material :
- SILICON
- Frequency :
- 100MHz
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 300mW
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 30V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 30V
- Transition Frequency :
- 100MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- BC848ALT1
BC848ALT1 Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC848ALT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC848ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848ALT1G Applications
There are a lot of ON Semiconductor
BC848ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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