BC848ALT1
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- Mfr.Part #
- BC848ALT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 30V 100MA SOT23
- Stock
- 2,493
- In Stock ：
- 2,493
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Width :
- 1.4mm
- Max Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 3.04mm
- Contact Plating :
- Tin
- hFE Min :
- 110
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 300mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Max Collector Current :
- 100mA
- Halogen Free :
- Halogen Free
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Max Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 600mV
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 30V
- Height :
- 1.01mm
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Packaging :
- Cut Tape (CT)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Current Rating :
- 100mA
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Voltage - Rated DC :
- 30V
- Lead Free :
- Lead Free
- Frequency :
- 100MHz
- Datasheets
- BC848ALT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC848ALT1G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 110 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 100mA volts.
BC848ALT1G Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC848ALT1G Applications
There are a lot of ON Semiconductor
BC848ALT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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