BC847W,135
- Mfr.Part #
- BC847W,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC847W - SMALL SIGN
- Stock
- 970,137
- In Stock :
- 970,137
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Package / Case :
- SC-70, SOT-323
- Polarity/Channel Type :
- NPN
- Frequency :
- 100MHz
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 110 @ 2mA 5V
- Base Part Number :
- BC847
- Max Power Dissipation :
- 200mW
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 100MHz
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pin Count :
- 3
- Power Dissipation :
- 200mW
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Published :
- 2008
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Datasheets
- BC847W,135

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847W,135 Overview
This device has a DC current gain of 110 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.As you can see, the part has a transition frequency of 100MHz.A maximum collector current of 100mA volts is possible.
BC847W,135 Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847W,135 Applications
There are a lot of Nexperia USA Inc.
BC847W,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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