BC847QASZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Emitter Base Voltage (VEBO) :

6V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Collector Base Voltage (VCBO) :

50V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Terminal Form :

NO LEAD

Max Breakdown Voltage :

45V

Transition Frequency :

100MHz

Series :

Automotive, AEC-Q101

Polarity/Channel Type :

NPN

Number of Terminations :

6

Operating Temperature :

150°C TJ

Published :

2015

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Frequency - Transition :

100MHz

Factory Lead Time :

4 Weeks

Transistor Type :

2 NPN (Dual)

Contact Plating :

Tin

Case Connection :

COLLECTOR

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Configuration :

SEPARATE, 2 ELEMENTS

Power - Max :

350mW

JESD-30 Code :

R-PDSO-N6

Collector Emitter Voltage (VCEO) :

300mV

Current - Collector Cutoff (Max) :

15nA ICBO

Packaging :

Cut Tape (CT)

Collector Emitter Breakdown Voltage :

45V

Number of Elements :

2

Package / Case :

6-XFDFN Exposed Pad

Max Power Dissipation :

350mW

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 5mA, 100mA

Reference Standard :

AEC-Q101; IEC-60134

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED