BC847QAPNZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Application :

SWITCHING

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

45V

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

100mV @ 500µA, 10mA

Emitter Base Voltage (VEBO) :

6V

Terminal Position :

Dual

Series :

Automotive, AEC-Q101

Max Collector Current :

100mA

JESD-30 Code :

R-PDSO-N6

Reference Standard :

AEC-Q101; IEC-60134

Pin Count :

6

Max Breakdown Voltage :

45V

Collector Emitter Saturation Voltage :

300mV

Collector Base Voltage (VCBO) :

50V

Factory Lead Time :

4 Weeks

hFE Min :

200

Continuous Collector Current :

100mA

Operating Temperature :

150°C TJ

Number of Terminations :

6

Transition Frequency :

100MHz

Terminal Form :

NO LEAD

Polarity :

NPN, PNP

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Transistor Element Material :

SILICON

Transistor Type :

NPN, PNP

Collector Emitter Breakdown Voltage :

45V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Published :

2014

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Gain Bandwidth Product :

100MHz

Configuration :

SEPARATE, 2 ELEMENTS

Max Power Dissipation :

350mW

Current - Collector Cutoff (Max) :

15nA ICBO

Package / Case :

6-XFDFN Exposed Pad