BC847CWT3G
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- Mfr.Part #
- BC847CWT3G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC70-3
- Stock
- 16,880
- In Stock ：
- 16,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Terminal Form :
- Gull wing
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Pin Count :
- 3
- Power Dissipation :
- 150mW
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Gain Bandwidth Product :
- 100MHz
- ECCN Code :
- EAR99
- Factory Lead Time :
- 4 Weeks
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 50V
- Package / Case :
- SC-70, SOT-323
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Polarity/Channel Type :
- NPN
- Terminal Position :
- Dual
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 150mW
- hFE Min :
- 270
- Datasheets
- BC847CWT3G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847CWT3G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
BC847CWT3G Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CWT3G Applications
There are a lot of ON Semiconductor
BC847CWT3G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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