BC847CWT1G
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- Mfr.Part #
- BC847CWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC70-3
- Stock
- 14,618
- In Stock ：
- 14,618
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 45V
- Width :
- 1.35mm
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 100mA
- Max Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Height :
- 900μm
- Pbfree Code :
- yes
- Current Rating :
- 100mA
- Frequency :
- 100MHz
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Max Power Dissipation :
- 150mW
- Surface Mount :
- yes
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- Lead Free :
- Lead Free
- Published :
- 2005
- Terminal Position :
- Dual
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Base Voltage (VCBO) :
- 50V
- Contact Plating :
- Tin
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- SC-70, SOT-323
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- Power Dissipation :
- 150mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 270
- Number of Elements :
- 1
- Length :
- 2.2mm
- ECCN Code :
- EAR99
- Datasheets
- BC847CWT1G
BC847CWT1G Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847CWT1G Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847CWT1G Applications
There are a lot of ON Semiconductor
BC847CWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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