BC847CWT1G
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- Mfr.Part #
- BC847CWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC70-3
- Stock
- 14,618
- In Stock ：
- 14,618
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Transition Frequency :
- 100MHz
- Collector Emitter Saturation Voltage :
- 600mV
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Collector Base Voltage (VCBO) :
- 50V
- Gain Bandwidth Product :
- 100MHz
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Width :
- 1.35mm
- Mounting Type :
- Surface Mount
- REACH SVHC :
- No SVHC
- Halogen Free :
- Halogen Free
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Polarity/Channel Type :
- NPN
- Surface Mount :
- yes
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 4 Weeks
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Power Dissipation :
- 150mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 100MHz
- Published :
- 2005
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Max Power Dissipation :
- 150mW
- Height :
- 900μm
- Number of Terminations :
- 3
- Current Rating :
- 100mA
- Voltage - Rated DC :
- 45V
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Length :
- 2.2mm
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 270
- Package / Case :
- SC-70, SOT-323
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC847CWT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847CWT1G Overview
DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 100mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BC847CWT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847CWT1G Applications
There are a lot of ON Semiconductor
BC847CWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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