BC847CWH6327XTSA1
- Mfr.Part #
- BC847CWH6327XTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT323
- Stock
- 32,205
- In Stock :
- 32,205
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Base Part Number :
- BC847
- JESD-609 Code :
- e3
- Additional Feature :
- LOW NOISE
- Length :
- 2mm
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Width :
- 1.25mm
- Max Collector Current :
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Mount :
- Surface Mount
- Height :
- 800μm
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Frequency - Transition :
- 250MHz
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 250MHz
- Published :
- 2011
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Max Frequency :
- 250MHz
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 600mV
- Package / Case :
- SC-70, SOT-323
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Halogen Free :
- Halogen Free
- Collector Emitter Saturation Voltage :
- 600mV
- Max Power Dissipation :
- 250mW
- Number of Pins :
- 3
- Datasheets
- BC847CWH6327XTSA1

NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847CWH6327XTSA1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 100mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.250MHz is present in the transition frequency.Maximum collector currents can be below 100mA volts.
BC847CWH6327XTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
BC847CWH6327XTSA1 Applications
There are a lot of Infineon Technologies
BC847CWH6327XTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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