BC847CW,135
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- Mfr.Part #
- BC847CW,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC847CW - SMALL SIG
- Stock
- 1,673,626
- In Stock ：
- 1,673,626
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage :
- 45V
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 45V
- Frequency :
- 100MHz
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transition Frequency :
- 100MHz
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Published :
- 2014
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 50V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 200mW
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Current :
- 1A
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- SC-70, SOT-323
- Base Part Number :
- BC847
- Power Dissipation :
- 200mW
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Series :
- Automotive, AEC-Q101
- Datasheets
- BC847CW,135
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847CW,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC847CW,135 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CW,135 Applications
There are a lot of Nexperia USA Inc.
BC847CW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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