BC847CW,135
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- Mfr.Part #
- BC847CW,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- NOW NEXPERIA BC847CW - SMALL SIG
- Stock
- 1,673,626
- In Stock ：
- 1,673,626
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 45V
- Package / Case :
- SC-70, SOT-323
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 200mW
- Transistor Element Material :
- SILICON
- Series :
- Automotive, AEC-Q101
- Polarity/Channel Type :
- NPN
- Base Part Number :
- BC847
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Lead Free :
- Lead Free
- Published :
- 2014
- Current :
- 1A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- NPN
- Power Dissipation :
- 200mW
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 100MHz
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Voltage :
- 45V
- Collector Emitter Breakdown Voltage :
- 45V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Datasheets
- BC847CW,135
BC847CW,135 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC847CW,135 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 45V volts that it can take.Collector current can be as low as 100mA volts at its maximum.
BC847CW,135 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CW,135 Applications
There are a lot of Nexperia USA Inc.
BC847CW,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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