BC847CTT1
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- Mfr.Part #
- BC847CTT1
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC75 SOT416
- Stock
- 42,828
- In Stock ：
- 42,828
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Current Rating :
- 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Lead Free :
- Contains Lead
- Element Configuration :
- Single
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Voltage - Rated DC :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transition Frequency :
- 100MHz
- Base Part Number :
- BC847*TT
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- hFE Min :
- 270
- JESD-609 Code :
- e0
- Transistor Application :
- AMPLIFIER
- Package / Case :
- SC-75, SOT-416
- Terminal Form :
- Gull wing
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 300mW
- Peak Reflow Temperature (Cel) :
- 240
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 225mW
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Published :
- 2009
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Datasheets
- BC847CTT1
BC847CTT1 Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
BC847CTT1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847CTT1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847CTT1 Applications
There are a lot of ON Semiconductor
BC847CTT1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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