BC847CTT1
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- Mfr.Part #
- BC847CTT1
- Manufacturer
- onsemi
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SC75 SOT416
- Stock
- 42,828
- In Stock ：
- 42,828
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 240
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Dual
- Reach Compliance Code :
- not_compliant
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Mount :
- Surface Mount
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 225mW
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Lead Free :
- Contains Lead
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Current Rating :
- 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Frequency :
- 100MHz
- Pin Count :
- 3
- Max Collector Current :
- 100mA
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- Non-RoHS Compliant
- Transistor Type :
- NPN
- Power Dissipation :
- 300mW
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 100MHz
- Collector Emitter Saturation Voltage :
- 600mV
- hFE Min :
- 270
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e0
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Terminal Form :
- Gull wing
- Voltage - Rated DC :
- 45V
- Element Configuration :
- Single
- Package / Case :
- SC-75, SOT-416
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- Qualification Status :
- Not Qualified
- Base Part Number :
- BC847*TT
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- BC847CTT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
BC847CTT1 Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 600mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 5mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 100mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847CTT1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847CTT1 Applications
There are a lot of ON Semiconductor
BC847CTT1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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