BC847CQAZ
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- Mfr.Part #
- BC847CQAZ
- Manufacturer
- Nexperia
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A DFN1010D-3
- Stock
- 5,000
- In Stock ：
- 5,000
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- NO LEAD
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Configuration :
- Single
- Power - Max :
- 280mW
- Terminal Position :
- Dual
- Package / Case :
- 3-XDFN Exposed Pad
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Breakdown Voltage :
- 45V
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 280mW
- Collector Emitter Breakdown Voltage :
- 45V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reference Standard :
- AEC-Q101; IEC-60134
- Pin Count :
- 3
- Mount :
- Surface Mount
- Series :
- Automotive, AEC-Q101
- Max Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 400mV
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 100MHz
- Published :
- 2014
- Number of Terminations :
- 3
- Frequency - Transition :
- 100MHz
- Number of Elements :
- 1
- JESD-30 Code :
- R-PDSO-N3
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Transistor Element Material :
- SILICON
- Datasheets
- BC847CQAZ
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
BC847CQAZ Overview
In this device, the DC current gain is 420 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 45V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
BC847CQAZ Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC847CQAZ Applications
There are a lot of Nexperia USA Inc.
BC847CQAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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