BC847CMTF
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- Mfr.Part #
- BC847CMTF
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 6,074
- In Stock ：
- 6,074
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 300MHz
- Current Rating :
- 100mA
- RoHS Status :
- RoHS Compliant
- Length :
- 2.92mm
- Contact Plating :
- Tin
- Transition Frequency :
- 300MHz
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Width :
- 1.3mm
- Terminal Position :
- Dual
- Power Dissipation :
- 310mW
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 45V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Operating Temperature :
- 150°C TJ
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 5 days ago)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- hFE Min :
- 110
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Frequency :
- 300MHz
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Transistor Application :
- SWITCHING
- Base Part Number :
- BC847
- Collector Base Voltage (VCBO) :
- 50V
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 45V
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 100mA
- Transistor Type :
- NPN
- Height :
- 930μm
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2011
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 45V
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 310mW
- Number of Pins :
- 3
- Voltage - Rated DC :
- 45V
- Collector Emitter Saturation Voltage :
- 200mV
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Weight :
- 30mg
- Datasheets
- BC847CMTF
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847CMTF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 100mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847CMTF Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 300MHz
BC847CMTF Applications
There are a lot of ON Semiconductor
BC847CMTF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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