BC847CMB,315
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- Mfr.Part #
- BC847CMB,315
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XFDFN
- Datasheet
- Download
- Description
- NOW NEXPERIA BC847CMB - SMALL SI
- Stock
- 6,937
- In Stock ：
- 6,937
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Series :
- Automotive, AEC-Q101
- Mount :
- Surface Mount
- Power Dissipation :
- 250mW
- Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- Current - Collector (Ic) (Max) :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Type :
- NPN
- Base Part Number :
- BC847
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Package / Case :
- 3-XFDFN
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2011
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 500μA, 10mA
- Max Collector Current :
- 100mA
- Max Power Dissipation :
- 250mW
- Datasheets
- BC847CMB,315
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN 3-XFDFN Tape & Reel (TR) Surface Mount
BC847CMB,315 Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 100MHz.The maximum collector current is 100mA volts.
BC847CMB,315 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 200mV @ 500μA, 10mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CMB,315 Applications
There are a lot of Nexperia USA Inc.
BC847CMB,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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