BC847CM,315
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- Mfr.Part #
- BC847CM,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT883
- Stock
- 1,775
- In Stock ：
- 1,775
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Series :
- Automotive, AEC-Q101
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Transistor Type :
- NPN
- Frequency :
- 100MHz
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BC847
- Collector Base Voltage (VCBO) :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Package / Case :
- SC-101, SOT-883
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 100MHz
- Transition Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Published :
- 2013
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Contact Plating :
- Tin
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 45V
- Max Power Dissipation :
- 250mW
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 250mW
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Element Configuration :
- Single
- Datasheets
- BC847CM,315
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
BC847CM,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847CM,315 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CM,315 Applications
There are a lot of Nexperia USA Inc.
BC847CM,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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