BC847CM,315
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- Mfr.Part #
- BC847CM,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT883
- Stock
- 1,775
- In Stock ：
- 1,775
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 45V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- Automotive, AEC-Q101
- Transition Frequency :
- 100MHz
- Package / Case :
- SC-101, SOT-883
- Gain Bandwidth Product :
- 100MHz
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 100mA
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 250mW
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Base Part Number :
- BC847
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 250mW
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Factory Lead Time :
- 8 Weeks
- Polarity/Channel Type :
- NPN
- Published :
- 2013
- Number of Elements :
- 1
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 50V
- Collector Emitter Breakdown Voltage :
- 45V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 45V
- Datasheets
- BC847CM,315
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN SC-101, SOT-883 Tape & Reel (TR) Surface Mount
BC847CM,315 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 420 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 45V volts.During maximum operation, collector current can be as low as 100mA volts.
BC847CM,315 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847CM,315 Applications
There are a lot of Nexperia USA Inc.
BC847CM,315 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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