BC847CLT3G

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Mfr.Part #
BC847CLT3G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 45V 0.1A SOT23-3
Stock
298
In Stock :
298

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Halogen Free :
Halogen Free
Surface Mount :
yes
Emitter Base Voltage (VEBO) :
6V
Lead Free :
Lead Free
Factory Lead Time :
4 Weeks
Packaging :
Tape and Reel (TR)
Max Power Dissipation :
300mW
Height :
1.11mm
Current - Collector Cutoff (Max) :
15nA ICBO
Terminal Position :
Dual
Gain Bandwidth Product :
100MHz
Mounting Type :
Surface Mount
Package / Case :
TO-236-3, SC-59, SOT-23-3
Element Configuration :
Single
Transition Frequency :
100MHz
Peak Reflow Temperature (Cel) :
260
Power Dissipation :
300mW
Contact Plating :
Tin
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
hFE Min :
420
Max Breakdown Voltage :
45V
Pbfree Code :
yes
Collector Emitter Breakdown Voltage :
45V
Polarity/Channel Type :
NPN
Number of Elements :
1
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
45V
DC Current Gain (hFE) (Min) @ Ic, Vce :
420 @ 2mA 5V
Number of Pins :
3
Max Collector Current :
100mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
ROHS3 Compliant
Number of Terminations :
3
Width :
1.4mm
Transistor Element Material :
SILICON
Published :
2005
Frequency :
100MHz
Length :
3.04mm
JESD-609 Code :
e3
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Transistor Type :
NPN
Collector Base Voltage (VCBO) :
50V
Current Rating :
100mA
Vce Saturation (Max) @ Ib, Ic :
600mV @ 5mA, 100mA
ECCN Code :
EAR99
Pin Count :
3
Voltage - Rated DC :
45V
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Saturation Voltage :
600mV
Datasheets
BC847CLT3G
Introducing Transistors - Bipolar (BJT) - Single onsemi BC847CLT3G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, BC847CLT3G pinout, BC847CLT3G datasheet PDF, BC847CLT3G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BC847CLT3G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BC847CLT3G


NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

BC847CLT3G Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 420 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 600mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.

BC847CLT3G Features


the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz


BC847CLT3G Applications


There are a lot of ON Semiconductor
BC847CLT3G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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