BC847CLT1G
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- Mfr.Part #
- BC847CLT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 30,202
- In Stock ：
- 30,202
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 45V
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- hFE Min :
- 420
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Height :
- 940μm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 45V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Halogen Free :
- Halogen Free
- Terminal Position :
- Dual
- Max Power Dissipation :
- 300mW
- Width :
- 1.3mm
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Packaging :
- Cut Tape (CT)
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Length :
- 2.9mm
- Max Collector Current :
- 100mA
- Collector Base Voltage (VCBO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 45V
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Transistor Type :
- NPN
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 600mV
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Current Rating :
- 100mA
- Radiation Hardening :
- No
- Transition Frequency :
- 100MHz
- Published :
- 2007
- Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Power Dissipation :
- 300mW
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Datasheets
- BC847CLT1G
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC847CLT1G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC847CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847CLT1G Applications
There are a lot of ON Semiconductor
BC847CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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