BC847CLT1
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- Mfr.Part #
- BC847CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 100MA SOT23
- Stock
- 36,304
- In Stock ：
- 36,304
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2007
- Collector Base Voltage (VCBO) :
- 50V
- Power Dissipation :
- 300mW
- Contact Plating :
- Tin
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- Max Breakdown Voltage :
- 45V
- Collector Emitter Voltage (VCEO) :
- 45V
- Transition Frequency :
- 100MHz
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- hFE Min :
- 420
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 100MHz
- Transistor Element Material :
- SILICON
- Height :
- 940μm
- Frequency :
- 100MHz
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Radiation Hardening :
- No
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 45V
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Packaging :
- Cut Tape (CT)
- Current Rating :
- 100mA
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Collector Emitter Saturation Voltage :
- 600mV
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 300mW
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Surface Mount :
- yes
- Number of Pins :
- 3
- Element Configuration :
- Single
- Max Collector Current :
- 100mA
- Length :
- 2.9mm
- Halogen Free :
- Halogen Free
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC847CLT1
BC847CLT1 Documents
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC847CLT1G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC847CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847CLT1G Applications
There are a lot of ON Semiconductor
BC847CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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