BC847CLT1
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- Mfr.Part #
- BC847CLT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 100MA SOT23
- Stock
- 36,304
- In Stock ：
- 36,304
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 600mV
- Halogen Free :
- Halogen Free
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Width :
- 1.3mm
- Height :
- 940μm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Max Breakdown Voltage :
- 45V
- Published :
- 2007
- hFE Min :
- 420
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Current Rating :
- 100mA
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Packaging :
- Cut Tape (CT)
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 300mW
- Gain Bandwidth Product :
- 100MHz
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Length :
- 2.9mm
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- No SVHC
- Surface Mount :
- yes
- Frequency :
- 100MHz
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 45V
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- Max Power Dissipation :
- 300mW
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 45V
- Datasheets
- BC847CLT1
NPN -55°C~150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
BC847CLT1G Overview
This device has a DC current gain of 420 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BC847CLT1G Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 100MHz
BC847CLT1G Applications
There are a lot of ON Semiconductor
BC847CLT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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