BC847CE6327HTSA1
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- Mfr.Part #
- BC847CE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23
- Stock
- 22,597
- In Stock ：
- 22,597
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Max Power Dissipation :
- 330mW
- Published :
- 2007
- Radiation Hardening :
- No
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation :
- 330mW
- Voltage - Rated DC :
- 45V
- Length :
- 2.9mm
- Halogen Free :
- Not Halogen Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Collector Emitter Voltage (VCEO) :
- 600mV
- Terminal Form :
- Gull wing
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Collector Emitter Saturation Voltage :
- 600mV
- Collector Emitter Breakdown Voltage :
- 45V
- Max Breakdown Voltage :
- 45V
- Base Part Number :
- BC847
- Width :
- 1.3mm
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- Transition Frequency :
- 250MHz
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 100mA
- Mount :
- Surface Mount
- Height :
- 1mm
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Current Rating :
- 100mA
- Frequency :
- 250MHz
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Datasheets
- BC847CE6327HTSA1
BC847CE6327HTSA1 Documents
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847CE6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 250MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847CE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC847CE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC847CE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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