BC847CE6327HTSA1
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- Mfr.Part #
- BC847CE6327HTSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23
- Stock
- 22,597
- In Stock ：
- 22,597
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 1.3mm
- Collector Base Voltage (VCBO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- Max Power Dissipation :
- 330mW
- Collector Emitter Breakdown Voltage :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 330mW
- Halogen Free :
- Not Halogen Free
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 420 @ 2mA 5V
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Polarity/Channel Type :
- NPN
- Length :
- 2.9mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BC847
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 600mV
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2007
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 45V
- Number of Pins :
- 3
- Transition Frequency :
- 250MHz
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Height :
- 1mm
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Max Breakdown Voltage :
- 45V
- Current Rating :
- 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 15nA ICBO
- JESD-609 Code :
- e3
- Factory Lead Time :
- 4 Weeks
- Frequency :
- 250MHz
- Lead Free :
- Lead Free
- Datasheets
- BC847CE6327HTSA1
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BC847CE6327HTSA1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 420 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 250MHz.This device can take an input voltage of 45V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC847CE6327HTSA1 Features
the DC current gain for this device is 420 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 100mA
a transition frequency of 250MHz
BC847CE6327HTSA1 Applications
There are a lot of Infineon Technologies
BC847CE6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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