BC847CDXV6T5

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Collector Emitter Voltage (VCEO) :

600mV

RoHS Status :

Non-RoHS Compliant

hFE Min :

270

Collector Emitter Saturation Voltage :

600mV

Published :

2009

Gain Bandwidth Product :

100MHz

Number of Terminations :

6

Collector Emitter Breakdown Voltage :

45V

ECCN Code :

EAR99

Max Power Dissipation :

500mW

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

100mA

Surface Mount :

yes

Transistor Element Material :

SILICON

Voltage - Rated DC :

45V

Element Configuration :

Dual

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

BC847CD

Number of Pins :

6

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Mounting Type :

Surface Mount

Pbfree Code :

yes

Transistor Application :

AMPLIFIER

Package / Case :

SOT-563, SOT-666

Packaging :

Tape and Reel (TR)

Transition Frequency :

100MHz

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Collector Base Voltage (VCBO) :

50V

Max Collector Current :

100mA

Terminal Form :

Flat

Lead Free :

Lead Free

Current - Collector Cutoff (Max) :

15nA ICBO

Polarity :

NPN

Transistor Type :

2 NPN (Dual)

Terminal Finish :

Tin (Sn)