BC847CDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Published :

2005

Max Power Dissipation :

500mW

Terminal Form :

Flat

JESD-609 Code :

e3

Polarity :

NPN

Collector Emitter Saturation Voltage :

600mV

Base Part Number :

BC847CD

Surface Mount :

yes

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

45V

Factory Lead Time :

17 Weeks

Contact Plating :

Tin

Pin Count :

6

Lead Free :

Lead Free

Transistor Type :

2 NPN (Dual)

Height :

609.6μm

Peak Reflow Temperature (Cel) :

260

Halogen Free :

Halogen Free

Power Dissipation :

500mW

Number of Terminations :

6

Collector Emitter Voltage (VCEO) :

45V

Current - Collector Cutoff (Max) :

15nA ICBO

Transition Frequency :

100MHz

Mounting Type :

Surface Mount

Current Rating :

100mA

Max Breakdown Voltage :

45V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Radiation Hardening :

No

Gain Bandwidth Product :

100MHz

Frequency :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

100mA

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Number of Pins :

6

Package / Case :

SOT-563, SOT-666

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

50V

Width :

1.2954mm

Element Configuration :

Dual

Emitter Base Voltage (VEBO) :

6V

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Breakdown Voltage :

45V

Length :

1.6764mm

hFE Min :

420

Packaging :

Tape and Reel (TR)

Number of Elements :

2